Adelmann, ChristophMartínez-Guerrero, EstebanMariette, H.Feuillet, GuyDaudin, B.2013-06-142013-06-141999-10-15C. Adelmann, E. Martinez-Guerrero, H. Mariette, G. Fuillet, and B. Daudin, Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy, J. Appl. Phys. Vol. 86, No. 8, pp 4322 - 4325, (1999)0021-8979http://hdl.handle.net/11117/651The kinetic changes in the growth of GaN induced by the presence of In segregated on the surface has been investigated in-situ by using high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely Ga-polar (0001) wurzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth.engGaNGa-polar WurziteZinc Blendeinfo:eu-repo/semantics/article