Martínez-Guerrero, EstebanAdelmann, ChristophChabuel, F.Simon, JuliaPelekanos, N.T.Mula, GuidoDaudin, B.Feuillet, G.Mariette, H.2013-06-142013-06-142000-08-07E. Martinez-Guerrero, C. Adelmann, F. Chabuel, J. Simon, N. T. Pelekanos, Guido Mula,a) B. Daudin, G. Feuillet, and H. Mariette, Self-assembled zinc blende GaN quantum dots grown, APPLIED PHYSICS LETTERS Vol. 77, N. 6, pp 809 - 811, (2000)0003-6951http://hdl.handle.net/11117/652Zinc blende ~ZB! GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on AlN buffer layers using 3C-SiC~001! substrates. The two- to three-dimensional growth mode transition is studied by following the evolution of the reflection high-energy electron diffraction pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a density of 1.331011 cm22. Embedded ZB GaN quantum dots show strong ultraviolet photoluminescence without any thermal quenching up to room temperature.engMolecular Beam EpitaxyKinetic GrowthAFMRHEEDTEMGaN Quantum Dotsinfo:eu-repo/semantics/article