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dc.contributor.authorMartínez-Guerrero, Esteban
dc.contributor.authorBellet-Amalric, E.
dc.contributor.authorMartinet, L.
dc.contributor.authorFeuillet, G.
dc.contributor.authorDaudin, B.
dc.date.accessioned2013-06-14T14:51:07Z
dc.date.available2013-06-14T14:51:07Z
dc.date.issued2002-04-15
dc.identifier.citationE. Martinez-Guerrero, E. Bellet-Amalric, L. Martinet, G. Feuillet, and B. Daudin, Structural properties of undoped and doped cubic GaN grown on SiC(001), JOURNAL OF APPLIED PHYSICS, Vol 91, N. 8, 4983-4987, (2002)es
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11117/654
dc.descriptionTransmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults ~SFs! in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act as nucleation sites for precipitates of residual impurities such as C and Si present in the GaN layers grown on SiC~001! substrates. We used the imaging secondary ion mass spectroscopy technique to locate these impurities. The systematic decrease of the SF density as a function of the layer thickness is explained by an annihilation mechanism. Finally, the effects of usual dopants on the structural properties of GaN layers are discussed. It is shown that Mg has a tendency to incorporate out of the Ga site by forming Mg precipitates for a concentration higher than 1019 cm23 in contrast with the results found for heavily Si doped layers.es
dc.description.sponsorshipSFEREes
dc.description.sponsorshipRegion Rhône-Alpeses
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnologíaes
dc.language.isoenges
dc.publisherAmerican Institute of Physics (AIP)es
dc.relation.ispartofseriesJOURNAL OF APPLIED PHYSICS;Vol 91, N. 8
dc.rights.urihttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdfes
dc.subjectCubic GaNes
dc.subjectSurface Morphologyes
dc.subjectStructural Propertieses
dc.subjectSIMSes
dc.subjectTEMes
dc.subjectX-Ray Diffractiones
dc.titleStructural properties of undoped and doped cubic GaN grown on SiC(001)es
dc.typeinfo:eu-repo/semantics/articlees
rei.revisorAmerican Institute of Physics (AIP)
rei.peerreviewedYeses


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