GaN Quantum Dots: Physics and Applications
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Korean Physical Society
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Descripción
Recent works by our group on hexagonal and cubic GaN/AlN quantum dots grown by molecular beam epitaxy are reviewed. It is shown that the growth of GaN on AlN can occur either in a layerby-
layer mode to form quantum wells or in the Stranski-Krastanow mode to form self-assembled quantum dots. High resolution transmission electron microscopy reveals that quantum dots are
truncated pyramids (typically 3 nm high and 15 nm wide), nucleating on top of a wetting layer.
The existence of internal electric elds of 7 MV/cm in hexagonal quantum dots is evidenced by observations of various physical e ects related to the quantum con ned Stark e ect, e.g. energy
redshift of the interband transition, decrease of its oscillator strength, or enhancement of the exciton interaction with LO phonons. Prospects for UV and near-IR applications, using interband and
intersubband transitions of GaN/AlN quantum dots, respectively, will be discussed also in this presentation.
Palabras clave
Self-assembled Quantum Dot, Nitride Semiconductors, Excitons, Quantum Confined Stark Effect, TEM, Photoluminiscence, Cathodoluminiscence, UV Laser
Citación
Le Si Dang, G. Fishman and H. Mariette, C. Adelmann, E. Martinez, J. Simon, B. Daudin, E. Monroy, N. Pelekanos and J. L. Rouviere, and Y. H. Cho, GaN Quantum Dots: Physics and Applications, Journal of the Korean Physical Society, Vol. 42, pp. S657-S661, (2003)