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Direct comparison of recombination dynamics in cubic and hexagonal GaN-AlN quantum dots

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dc.contributor.author Simon, Julia
dc.contributor.author Pelekanos, N.T.
dc.contributor.author Adelmann, Christoph
dc.contributor.author Martínez-Guerrero, Esteban
dc.contributor.author André, R.
dc.contributor.author Daudin, B.
dc.contributor.author Dang, Le Si
dc.contributor.author Mariette, H.
dc.date.accessioned 2013-06-14T15:32:18Z
dc.date.available 2013-06-14T15:32:18Z
dc.date.issued 2003-07-15
dc.identifier.citation J. Simon, N. T. Pelekanos, C. Adelmann,E. Martinez-Guerrero, R. André, B. Daudin, Le Si Dang, and H. Mariette, Direct comparison of recombination dynamics in cubic and hexagonal GaN-AlN quantum dots, Phys. Rev. B 68, 035312 (1-7), (2003) es
dc.identifier.issn 1098-0121
dc.identifier.uri http://hdl.handle.net/11117/657
dc.description We report on time-integrated and -resolved photoluminescence (PL) data on self-assembled GaN quantum dots (QD's) embedded in AlN, in both cubic [zinc-blende (ZB)] and hexagonal [wurtzite (Wz)] crystallographic phases. The comparison of the optical properties of ZB and Wz nitride QD's allows us to distinguish pure dimensionality effects from the influence of the large polarization-induced electric fields present in the Wz nanostructures. Specifically, the PL energy of the ZB QD's is always higher than the bulk cubic GaN band-gap energy, in contrast to the Wz QD's where a 7-MV/cm polarization field gives rise to below-gap PL emission for sufficiently large QD's. As a further consequence of the internal field, the low-temperature PL decay times of the Wz QD's are significantly longer than the ZB ones, and increase strongly with the QD height in contrast to the ZB ones, which exhibit only a small size dependence. For both types of QD's, the PL intensity is found to be weakly dependent on temperature, underscoring the strong zero-dimensional exciton localization in the GaN/AlN system. In spite of the strong localization, however, we show that the nonradiative channels cannot be neglected and have a significant contribution in the PL decay time for both ZB and Wz QD's es
dc.description.sponsorship SFERE es
dc.description.sponsorship Region Rhône-Alpes es
dc.description.sponsorship Consejo Nacional de Ciencia y Tecnología es
dc.language.iso eng es
dc.publisher American Physical Society es
dc.relation.ispartofseries Phys. Rev. B;No 68
dc.rights.uri http://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdf es
dc.subject Wuirzite es
dc.subject Zincblende GaN es
dc.subject AlN Quatum Dots es
dc.subject Photoluminiscence es
dc.subject Carrier Lifetime es
dc.title Direct comparison of recombination dynamics in cubic and hexagonal GaN-AlN quantum dots es
dc.type info:eu-repo/semantics/article es
rei.revisor American Physical Society
rei.peerreviewed Yes es


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