Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy

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dc.contributor.authorAdelmann, Christoph
dc.contributor.authorMartínez-Guerrero, Esteban
dc.contributor.authorMariette, H.
dc.contributor.authorFeuillet, Guy
dc.contributor.authorDaudin, B.
dc.date.accessioned2013-06-14T14:11:02Z
dc.date.available2013-06-14T14:11:02Z
dc.date.issued1999-10-15
dc.descriptionThe kinetic changes in the growth of GaN induced by the presence of In segregated on the surface has been investigated in-situ by using high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely Ga-polar (0001) wurzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth.es
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnologíaes
dc.identifier.citationC. Adelmann, E. Martinez-Guerrero, H. Mariette, G. Fuillet, and B. Daudin, Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy, J. Appl. Phys. Vol. 86, No. 8, pp 4322 - 4325, (1999)es
dc.identifier.isbn0021-8979
dc.identifier.urihttp://hdl.handle.net/11117/651
dc.language.isoenges
dc.publisherAmerican Institute of Physics (AIP)es
dc.relation.ispartofseriesJournal of Applied Physics;8
dc.rights.urihttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdfes
dc.subjectGaNes
dc.subjectGa-polar Wurzitees
dc.subjectZinc Blendees
dc.titleIndium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxyes
dc.typeinfo:eu-repo/semantics/articlees
rei.peerreviewedYeses
rei.revisorAmerican Institute of Physics (AIP)

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