Control of the morphology transition for the growth of cubic GaN-AlN nanostructures

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dc.contributor.authorMartínez-Guerrero, Esteban
dc.contributor.authorChabuel, F.
dc.contributor.authorDaudin, B.
dc.contributor.authorRouvière, J.L.
dc.contributor.authorMariette, H.
dc.date.accessioned2013-06-14T14:45:52Z
dc.date.available2013-06-14T14:45:52Z
dc.date.issued2002-12-30
dc.descriptionThe Stransky–Krastanow growth mode of strained layers which gives rise to a morphology transition from two-dimensional layer to three-dimensional islands is studied in details for the cubic gallium nitride on cubic aluminum nitride ~GaN/AlN! system grown by molecular beam epitaxy. Besides the lattice parameter mismatch which governs this transition, we evidence the importance of two other parameters, namely the substrate temperature and the III/V flux ratio. Tuning each of these two parameters enables to control the strain relaxation mechanism of a GaN deposited onto AlN, leading to the growth of either quantum wells or quantum dots.es
dc.description.sponsorshipSFEREes
dc.description.sponsorshipRegion Rhône-Alpeses
dc.description.sponsorshipITESO, A.C.es
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnologíaes
dc.identifier.citationE. Martinez-Guerrero,a) F. Chabuel, B. Daudin, J. L. Rouvière, and H. Mariette, Control of the morphology transition for the growth of cubic GaN/AlN nanostructures, APPLIED PHYSICS LETTERS, Vol. 81, N. 27, pp 5117-5119, (2002)es
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11117/653
dc.language.isoenges
dc.publisherAmerican Institute of Physics (AIP)es
dc.relation.ispartofseriesAPPLIED PHYSICS LETTERS;Number 27
dc.rights.urihttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdfes
dc.subjectCubic GaNes
dc.subjectNanostructureses
dc.subjectMolecular Beam Epitaxyes
dc.subjectRHEED Oscillationses
dc.subjectTEMes
dc.titleControl of the morphology transition for the growth of cubic GaN-AlN nanostructureses
dc.typeinfo:eu-repo/semantics/articlees
rei.peerreviewedYeses
rei.revisorAmerican Institute of Physics (AIP)

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