Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy
Description
The kinetic changes in the growth of GaN induced by the presence of In segregated on the surface has been investigated in-situ by using high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely Ga-polar (0001) wurzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth.Consejo Nacional de Ciencia y Tecnología