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    Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy

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    JAP_86(8).pdf (349Kb)
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    Date
    1999-10-15
    Author
    Adelmann, Christoph
    Martínez-Guerrero, Esteban
    Mariette, H.
    Feuillet, Guy
    Daudin, B.
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    URI
    http://hdl.handle.net/11117/651
    Description
    The kinetic changes in the growth of GaN induced by the presence of In segregated on the surface has been investigated in-situ by using high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely Ga-polar (0001) wurzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth.
    Consejo Nacional de Ciencia y Tecnología
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    © ITESO, Universidad Jesuita de Guadalajara 2022

    Sistemas de Información de la Dirección de Información Académica, DIA
    Biblioteca "Dr. Jorge Villalobos Padilla, S.J."

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