Control of the morphology transition for the growth of cubic GaN-AlN nanostructures
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Fecha
2002-12-30
Autores
Martínez-Guerrero, Esteban
Chabuel, F.
Daudin, B.
Rouvière, J.L.
Mariette, H.
Título de la revista
ISSN de la revista
Título del volumen
Editor
American Institute of Physics (AIP)
Resumen
Descripción
The Stransky–Krastanow growth mode of strained layers which gives rise to a morphology transition from two-dimensional layer to three-dimensional islands is studied in details for the cubic gallium nitride on cubic aluminum nitride ~GaN/AlN! system grown by molecular beam epitaxy.
Besides the lattice parameter mismatch which governs this transition, we evidence the importance of two other parameters, namely the substrate temperature and the III/V flux ratio. Tuning each of these two parameters enables to control the strain relaxation mechanism of a GaN deposited onto AlN, leading to the growth of either quantum wells or quantum dots.
Palabras clave
Cubic GaN, Nanostructures, Molecular Beam Epitaxy, RHEED Oscillations, TEM
Citación
E. Martinez-Guerrero,a) F. Chabuel, B. Daudin, J. L. Rouvière, and H. Mariette, Control of the morphology transition for the growth of cubic GaN/AlN nanostructures, APPLIED PHYSICS LETTERS, Vol. 81, N. 27, pp 5117-5119, (2002)