Reliable full-wave EM simulation of a single-layer SIW interconnect with transitions to microstrip lines

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dc.contributor.authorRayas-Sánchez, José E.
dc.contributor.authorChávez-Hurtado, José L.
dc.contributor.authorBrito-Brito, Zabdiel
dc.date.accessioned2016-03-02T17:31:20Z
dc.date.available2016-03-02T17:31:20Z
dc.date.issued2014-10
dc.descriptionWe present a procedure to obtain reliable EM responses for a substrate integrated waveguide (SIW) interconnect with microstrip line transitions. The procedure focuses on two COMSOL configuration settings: meshing sizes and simulation bounding box. Once both are properly configured, the implemented structure is tested by perturbing the simulation bounding box to assure it has no effect on the EM responseses
dc.description.sponsorshipITESO, A.C.es
dc.identifier.citationChávez-Hurtado, J.L.; Rayas-Sánchez,E. and Brito-Brito, Z. “Reliable full-wave EM simulation of a single-layer SIW interconnect with transitions to microstrip lines,” in COMSOL Conf., Boston, MA, Oct. 2014, pp. 1-5. (DOI: 10.13140/RG.2.1.2579.1445).es
dc.identifier.otherDOI: 10.13140/RG.2.1.2579.1445
dc.identifier.urihttp://hdl.handle.net/11117/3131
dc.language.isoenges
dc.publisherCOMSOL Conferencees
dc.relation.ispartofseriesCOMSOL Conference;
dc.rights.urihttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-2.5-MX.pdfes
dc.subjectSimulation Bounding Boxes
dc.subjectMeshing Schemees
dc.subjectSIWes
dc.subjectMicrostrip Linees
dc.subjectInterconnectes
dc.subjectEM Simulationes
dc.titleReliable full-wave EM simulation of a single-layer SIW interconnect with transitions to microstrip lineses
dc.typeinfo:eu-repo/semantics/conferencePaperes
rei.peerreviewedYeses
rei.revisorCOMSOL Conference

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