Self-assembled zinc blende GaN quantum dots grown
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Fecha
2000-08-07
Autores
Martínez-Guerrero, Esteban
Adelmann, Christoph
Chabuel, F.
Simon, Julia
Pelekanos, N.T.
Mula, Guido
Daudin, B.
Feuillet, G.
Mariette, H.
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Título del volumen
Editor
American Institute of Physics (AIP)
Resumen
Descripción
Zinc blende ~ZB! GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy
on AlN buffer layers using 3C-SiC~001! substrates. The two- to three-dimensional growth mode
transition is studied by following the evolution of the reflection high-energy electron diffraction
pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission
electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a
density of 1.331011 cm22. Embedded ZB GaN quantum dots show strong ultraviolet
photoluminescence without any thermal quenching up to room temperature.
Palabras clave
Molecular Beam Epitaxy, Kinetic Growth, AFM, RHEED, TEM, GaN Quantum Dots
Citación
E. Martinez-Guerrero, C. Adelmann, F. Chabuel, J. Simon, N. T. Pelekanos, Guido Mula,a) B. Daudin, G. Feuillet, and H. Mariette, Self-assembled zinc blende GaN quantum dots grown, APPLIED PHYSICS LETTERS Vol. 77, N. 6, pp 809 - 811, (2000)