Self-assembled zinc blende GaN quantum dots grown

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dc.contributor.authorMartínez-Guerrero, Esteban
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorChabuel, F.
dc.contributor.authorSimon, Julia
dc.contributor.authorPelekanos, N.T.
dc.contributor.authorMula, Guido
dc.contributor.authorDaudin, B.
dc.contributor.authorFeuillet, G.
dc.contributor.authorMariette, H.
dc.date.accessioned2013-06-14T14:15:43Z
dc.date.available2013-06-14T14:15:43Z
dc.date.issued2000-08-07
dc.descriptionZinc blende ~ZB! GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on AlN buffer layers using 3C-SiC~001! substrates. The two- to three-dimensional growth mode transition is studied by following the evolution of the reflection high-energy electron diffraction pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a density of 1.331011 cm22. Embedded ZB GaN quantum dots show strong ultraviolet photoluminescence without any thermal quenching up to room temperature.es
dc.description.sponsorshipSFEREes
dc.description.sponsorshipRegion Rhône-Alpeses
dc.description.sponsorshipConsejo Nacional de Ciencia y Tecnologíaes
dc.identifier.citationE. Martinez-Guerrero, C. Adelmann, F. Chabuel, J. Simon, N. T. Pelekanos, Guido Mula,a) B. Daudin, G. Feuillet, and H. Mariette, Self-assembled zinc blende GaN quantum dots grown, APPLIED PHYSICS LETTERS Vol. 77, N. 6, pp 809 - 811, (2000)es
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11117/652
dc.language.isoenges
dc.publisherAmerican Institute of Physics (AIP)es
dc.relation.ispartofseriesAPPLIED PHYSICS LETTERS;6
dc.rights.urihttp://quijote.biblio.iteso.mx/licencias/CC-BY-NC-ND-2.5-MX.pdfes
dc.subjectMolecular Beam Epitaxyes
dc.subjectKinetic Growthes
dc.subjectAFMes
dc.subjectRHEEDes
dc.subjectTEMes
dc.subjectGaN Quantum Dotses
dc.titleSelf-assembled zinc blende GaN quantum dots grownes
dc.typeinfo:eu-repo/semantics/articlees
rei.peerreviewedYeses
rei.revisorAmerican Institute of Physics (AIP)

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